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SPU18P06P

Infineon Technologies

Product No:

SPU18P06P

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

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Datasheet:

Description:

MOSFET P-CH 60V 18.6A TO251-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	130mOhm @ 13.2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	PG-TO251-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	-
Series	SIPMOS®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18.6A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SPU18P