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SQD10N30-330H_4GE3

Vishay Siliconix

Product No:

SQD10N30-330H_4GE3

Manufacturer:

Vishay Siliconix

Package:

TO-252AA

Batch:

-

Datasheet:

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Description:

N-CHANNEL 300-V (D-S) 175C MOSFE

Quantity:

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In Stock : 3258

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Unit Price

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    $1.501

  • 10

    $1.2312

    $12.312

  • 100

    $0.957505

    $95.7505

  • 500

    $0.811604

    $405.802

  • 1000

    $0.661134

    $661.134

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 330mOhm @ 14A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.4V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 300 V
Power Dissipation (Max) 107W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)

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