Home / Single FETs, MOSFETs / SQJ443EP-T2_GE3

SQJ443EP-T2_GE3

Vishay Siliconix

Product No:

SQJ443EP-T2_GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

Datasheet:

Description:

P-CHANNEL 40-V (D-S) 175C MOSFET

Quantity:

Delivery:

Payment:

In Stock : 5668

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.007

$1.007
10

$0.82745

$8.2745
100

$0.64334

$64.334
500

$0.545338

$272.669
1000

$0.44423

$444.23

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SQJ443EP-T2_GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SQJ443EP-T2_GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SQJ443EP-T2_GE3 without requiring registration. Latest information on SQJ443EP-T2_GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SQJ443EP-T2_GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	29mOhm @ 18A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	83W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)