Home / Single FETs, MOSFETs / SQJ850EP-T2_GE3

SQJ850EP-T2_GE3

Vishay Siliconix

Product No:

SQJ850EP-T2_GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

Datasheet:

Description:

N-CHANNEL 60-V (D-S) 175C MOSFET

Quantity:

Delivery:

Payment:

In Stock : 8990

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.3395

$1.3395
10

$1.0944

$10.944
100

$0.851105

$85.1105
500

$0.72143

$360.715
1000

$0.58767

$587.67

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of SQJ850EP-T2_GE3, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include SQJ850EP-T2_GE3 and the required quantity in the RFQ. GOOD can get the latest quotations of SQJ850EP-T2_GE3 without registration. SQJ850EP-T2_GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1225 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	23mOhm @ 10.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	45W (Tc)
Series	-
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)