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SQM120P10_10M1LGE3

Vishay Siliconix

Product No:

SQM120P10_10M1LGE3

Manufacturer:

Vishay Siliconix

Package:

TO-263 (D²Pak)

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Datasheet:

Description:

MOSFET P-CH 100V 120A TO263

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.1mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-263 (D²Pak)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	375W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQM120