Home / Single FETs, MOSFETs / SQS142ENW-T1_GE3

SQS142ENW-T1_GE3

Vishay Siliconix

Product No:

SQS142ENW-T1_GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SLW

Batch:

Datasheet:

Description:

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SQS142ENW-T1_GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SQS142ENW-T1_GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SQS142ENW-T1_GE3 without requiring registration. Latest information on SQS142ENW-T1_GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SQS142ENW-T1_GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1952 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	4.5mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.3V @ 250µA
Supplier Device Package	PowerPAK® 1212-8SLW
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	113W (Tc)
Series	Automotive, AEC-Q101, TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8SLW
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	SQS142