Home / Single FETs, MOSFETs / SQV120N06-4M7L_GE3

SQV120N06-4M7L_GE3

Vishay Siliconix

Product No:

SQV120N06-4M7L_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-262-3

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 120A TO262-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SQV120N06-4M7L_GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SQV120N06-4M7L_GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SQV120N06-4M7L_GE3 without requiring registration. Latest information on SQV120N06-4M7L_GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SQV120N06-4M7L_GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.7mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-262-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	250W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQV120