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SQV120N10-3M8_GE3

Vishay Siliconix

Product No:

SQV120N10-3M8_GE3

Manufacturer:

Vishay Siliconix

Package:

28-SOIC

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Datasheet:

Description:

MOSFET N-CH 100V 120A TO262-3

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	28-SOIC
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	250W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	28-SOIC (0.295", 7.50mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SQV120