Home / FET, MOSFET Arrays / SSM6N16FUTE85LF

SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

Product No:

SSM6N16FUTE85LF

Manufacturer:

Toshiba Semiconductor and Storage

Package:

US6

Batch:

Datasheet:

Description:

MOSFET 2N-CH 20V 0.1A US6

Quantity:

Delivery:

Payment:

In Stock : 3600

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.456

$0.456
10

$0.3382

$3.382
100

$0.191235

$19.1235
500

$0.126654

$63.327
1000

$0.0971

$97.1

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SSM6N16FUTE85LF, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SSM6N16FUTE85LF and the required quantity in your RFQ. IICSEMI provides the latest quote for SSM6N16FUTE85LF without requiring registration. Latest information on SSM6N16FUTE85LF: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SSM6N16FUTE85LF latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	9.3pF @ 3V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3Ohm @ 10mA, 4V
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 100µA
Supplier Device Package	US6
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	200mW
Current - Continuous Drain (Id) @ 25°C	100mA
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel (TR)
Base Product Number	SSM6N16