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SSW4N60BTM

Fairchild Semiconductor

Product No:

SSW4N60BTM

Package:

D2PAK

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 3.13W (Ta), 100W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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