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STB10N65K3

STMicroelectronics

Product No:

STB10N65K3

Manufacturer:

STMicroelectronics

Package:

D²PAK (TO-263)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 650V 10A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 901

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.1755

    $2.1755

  • 10

    $1.80975

    $18.0975

  • 100

    $1.440675

    $144.0675

  • 500

    $1.21904

    $609.52

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1Ohm @ 3.6A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4.5V @ 100µA
Supplier Device Package D²PAK (TO-263)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 150W (Tc)
Series SuperMESH3™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STB10N6

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