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STB21NM60N-1

STMicroelectronics

Product No:

STB21NM60N-1

Manufacturer:

STMicroelectronics

Package:

I2PAK

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Datasheet:

Description:

MOSFET N-CH 600V 17A I2PAK

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	220mOhm @ 8.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	140W (Tc)
Series	MDmesh™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STB21N