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STB4NK60Z-1

STMicroelectronics

Product No:

STB4NK60Z-1

Manufacturer:

STMicroelectronics

Package:

I2PAK

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Datasheet:

Description:

MOSFET N-CH 600V 4A I2PAK

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2Ohm @ 2A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4.5V @ 50µA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	70W (Tc)
Series	SuperMESH™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STB4NK60