Home / Single FETs, MOSFETs / STH200N10WF7-2

STH200N10WF7-2

STMicroelectronics

Product No:

STH200N10WF7-2

Manufacturer:

STMicroelectronics

Package:

H2Pak-2

Batch:

Datasheet:

Description:

N-CHANNEL 100 V, 4.8 MOHM TYP.,

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for STH200N10WF7-2, please feel free to contact us. To facilitate the processing of your inquiry, kindly include STH200N10WF7-2 and the required quantity in your RFQ. IICSEMI provides the latest quote for STH200N10WF7-2 without requiring registration. Latest information on STH200N10WF7-2: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs STH200N10WF7-2 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	H2Pak-2
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	340W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)