Home / Single FETs, MOSFETs / STL3N10F7

STL3N10F7

STMicroelectronics

Product No:

STL3N10F7

Manufacturer:

STMicroelectronics

Package:

PowerFlat™ (2x2)

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 4A POWERFLAT

Quantity:

Delivery:

Payment:

In Stock : 2607

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.8835

$0.8835
10

$0.7885

$7.885
100

$0.61446

$61.446
500

$0.507604

$253.802
1000

$0.400738

$400.738

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for STL3N10F7, please feel free to contact us. To facilitate the processing of your inquiry, kindly include STL3N10F7 and the required quantity in your RFQ. IICSEMI provides the latest quote for STL3N10F7 without requiring registration. Latest information on STL3N10F7: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs STL3N10F7 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	408 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	7.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	70mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	PowerFlat™ (2x2)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.4W (Tc)
Series	DeepGATE™, STripFET™ VII
Package / Case	6-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	STL3