Home / Single FETs, MOSFETs / STW65N023M9-4

STW65N023M9-4

STMicroelectronics

Product No:

STW65N023M9-4

Manufacturer:

STMicroelectronics

Package:

TO-247-4

Batch:

Datasheet:

Description:

N-CHANNEL 650 V, 19.9 MOHM TYP.,

Quantity:

Delivery:

Payment:

In Stock : 70

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$20.406

$20.406
10

$18.1336

$181.336
100

$15.86025

$1586.025
500

$13.53408

$6767.04

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for STW65N023M9-4, please feel free to contact us. To facilitate the processing of your inquiry, kindly include STW65N023M9-4 and the required quantity in your RFQ. IICSEMI provides the latest quote for STW65N023M9-4 without requiring registration. Latest information on STW65N023M9-4: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs STW65N023M9-4 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8844 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	23mOhm @ 48A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.2V @ 250µA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	463W (Tc)
Series	-
Package / Case	TO-247-4
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	95A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STW65