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SUP50N10-21P-GE3

Vishay Siliconix

Product No:

SUP50N10-21P-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

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Description:

MOSFET N-CH 100V 50A TO220AB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2055 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	21mOhm @ 10A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.1W (Ta), 125W (Tc)
Series	TrenchFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	SUP50