Home / Single FETs, MOSFETs / TP65H480G4JSGB-TR

TP65H480G4JSGB-TR

Transphorm

Product No:

TP65H480G4JSGB-TR

Manufacturer:

Transphorm

Package:

8-PQFN (5x6)

Batch:

Datasheet:

Description:

GANFET N-CH 650V 3.6A QFN5X6

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TP65H480G4JSGB-TR, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TP65H480G4JSGB-TR and the required quantity in your RFQ. IICSEMI provides the latest quote for TP65H480G4JSGB-TR without requiring registration. Latest information on TP65H480G4JSGB-TR: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TP65H480G4JSGB-TR latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	414 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	560mOhm @ 3A, 6V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 500µA
Supplier Device Package	8-PQFN (5x6)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	13.2W (Tc)
Series	SuperGaN®
Package / Case	8-PowerTDFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Mfr	Transphorm
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	6V
Package	Tape & Reel (TR)