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TPD3215M

Transphorm

Product No:

TPD3215M

Manufacturer:

Transphorm

Package:

Module

Batch:

-

Datasheet:

-

Description:

GANFET 2N-CH 600V 70A MODULE

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 34mOhm @ 30A, 8V
Product Status Obsolete
Vgs(th) (Max) @ Id -
Supplier Device Package Module
Drain to Source Voltage (Vdss) 600V
Series -
Package / Case Module
Technology GaNFET (Gallium Nitride)
Power - Max 470W
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Mfr Transphorm
Package Bulk
Base Product Number TPD3215

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