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TRS16N65FB,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS16N65FB,S1Q

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

SIC SBD TO-247 V=650 IF=12A

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 238

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.6715

    $5.6715

  • 10

    $4.76045

    $47.6045

  • 100

    $3.851395

    $385.1395

  • 500

    $3.423496

    $1711.748

  • 1000

    $2.931368

    $2931.368

  • 2000

    $2.760196

    $5520.392

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Mounting Type Through Hole
Product Status Active
Supplier Device Package TO-247
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Series -
Package / Case TO-247-3
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 8 A
Diode Configuration 1 Pair Common Cathode
Mfr Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tube
Current - Average Rectified (Io) (per Diode) 8A (DC)
Operating Temperature - Junction 175°C
Base Product Number TRS16N65

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