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TRS4E65H,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS4E65H,S1Q

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220-2L

Batch:

Datasheet:

Description:

G3 SIC-SBD 650V 4A TO-220-2L

Quantity:

Delivery:

Payment:

In Stock : 400

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.7575

$1.7575
10

$1.4573

$14.573
100

$1.160045

$116.0045
500

$0.981578

$490.789
1000

$0.832846

$832.846
2000

$0.791208

$1582.416
5000

$0.761463

$3807.315
10000

$0.73625

$7362.5

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Product Information

Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	263pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-220-2L
Current - Reverse Leakage @ Vr	55 µA @ 650 V
Series	-
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 4 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io)	4A
Operating Temperature - Junction	175°C