Home / Single Diodes / TRS6A65F,S1Q

TRS6A65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS6A65F,S1Q

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220F-2L

Batch:

Datasheet:

Description:

DIODE SIL CARBIDE 650V 6A TO220F

Quantity:

Delivery:

Payment:

In Stock : 6

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.565

$2.565
10

$2.1565

$21.565
100

$1.74439

$174.439
500

$1.550552

$775.276
1000

$1.327663

$1327.663
2000

$1.250134

$2500.268
5000

$1.199375

$5996.875

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of TRS6A65F,S1Q, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include TRS6A65F,S1Q and the required quantity in the RFQ. GOOD can get the latest quotations of TRS6A65F,S1Q without registration. TRS6A65F,S1Q latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	22pF @ 650V, 1MHz
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-220F-2L
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Series	-
Package / Case	TO-220-2 Full Pack
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 6 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io)	6A
Operating Temperature - Junction	175°C (Max)
Base Product Number	TRS6A65