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TRS6V65H,LQ

Toshiba Semiconductor and Storage

Product No:

TRS6V65H,LQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

4-DFN-EP (8x8)

Batch:

Datasheet:

Description:

G3 SIC-SBD 650V 6A DFN8X8

Quantity:

Delivery:

Payment:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.204

$2.204
10

$1.8335

$18.335
100

$1.45939

$145.939
500

$1.234886

$617.443
1000

$1.047774

$1047.774

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Product Information

Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	392pF @ 1V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	4-DFN-EP (8x8)
Current - Reverse Leakage @ Vr	70 µA @ 650 V
Series	-
Package / Case	4-VSFN Exposed Pad
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 6 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	6A
Operating Temperature - Junction	175°C