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TSM060NB06CZ

Taiwan Semiconductor Corporation

Product No:

TSM060NB06CZ

Manufacturer:

Taiwan Semiconductor Corporation

Package:

TO-220

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Datasheet:

Description:

60V, 111A, SINGLE N-CHANNEL POWE

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6842 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	103 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6mOhm @ 13A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2W (Ta), 156W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 111A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tube
Base Product Number	TSM060