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TSM088NA03CR RLG

Taiwan Semiconductor Corporation

Product No:

TSM088NA03CR RLG

Package:

8-PDFN (5x6)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 61A 8PDFN

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 12.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.8mOhm @ 13A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-PDFN (5x6)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 56W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 61A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TSM088

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