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TSM1NB60CW RPG

Taiwan Semiconductor Corporation

Product No:

TSM1NB60CW RPG

Package:

SOT-223

Batch:

-

Datasheet:

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Description:

MOSFET N-CHANNEL 600V 1A SOT223

Quantity:

Delivery:

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Payment:

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In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.3965

    $1.3965

  • 10

    $1.14

    $11.4

  • 100

    $0.88654

    $88.654

  • 500

    $0.751488

    $375.744

  • 1000

    $0.612161

    $612.161

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 138 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package SOT-223
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 39W (Tc)
Series -
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TSM1NB60

Detail Info

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