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TSM2N100CH C5G

Taiwan Semiconductor Corporation

Product No:

TSM2N100CH C5G

Manufacturer:

Taiwan Semiconductor Corporation

Package:

TO-251 (IPAK)

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Datasheet:

Description:

MOSFET N-CH 1000V 1.85A TO251

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.5Ohm @ 900mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.5V @ 250µA
Supplier Device Package	TO-251 (IPAK)
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	77W (Tc)
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.85A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM2N100