Home / Single FETs, MOSFETs / TSM2N7000KCT B0G

TSM2N7000KCT B0G

Taiwan Semiconductor Corporation

Product No:

TSM2N7000KCT B0G

Manufacturer:

Taiwan Semiconductor Corporation

Package:

TO-92

Batch:

Datasheet:

Description:

MOSFET N-CHANNEL 60V 300MA TO92

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TSM2N7000KCT B0G, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TSM2N7000KCT B0G and the required quantity in your RFQ. IICSEMI provides the latest quote for TSM2N7000KCT B0G without requiring registration. Latest information on TSM2N7000KCT B0G: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TSM2N7000KCT B0G latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	0.4 nC @ 4.5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5Ohm @ 100mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-92
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	400mW (Ta)
Series	-
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Box
Base Product Number	TSM2N7000