Home / Single FETs, MOSFETs / TSM4ND60CI C0G

TSM4ND60CI C0G

Name: TSM4ND60CI C0G
Brand: Taiwan Semiconductor Corporation
SKU: 0
Rating: 5 (1 reviews)

Taiwan Semiconductor Corporation

Product No:

TSM4ND60CI C0G

Manufacturer:

Taiwan Semiconductor Corporation

Package:

ITO-220

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 4A ITO220

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TSM4ND60CI C0G, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TSM4ND60CI C0G and the required quantity in your RFQ. IICSEMI provides the latest quote for TSM4ND60CI C0G without requiring registration. Latest information on TSM4ND60CI C0G: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TSM4ND60CI C0G latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	582 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.2Ohm @ 1.4A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	3.8V @ 250µA
Supplier Device Package	ITO-220
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	41.6W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM4ND60