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TSM4ND65CI

Taiwan Semiconductor Corporation

Product No:

TSM4ND65CI

Package:

ITO-220

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 650V 4A ITO220

Quantity:

Delivery:

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Payment:

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In Stock : 1847

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.451

    $2.451

  • 10

    $2.033

    $20.33

  • 100

    $1.61804

    $161.804

  • 500

    $1.369121

    $684.5605

  • 1000

    $1.161688

    $1161.688

  • 2000

    $1.103606

    $2207.212

  • 5000

    $1.06211

    $5310.55

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 596 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 250µA
Supplier Device Package ITO-220
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 41.6W (Tc)
Series -
Package / Case TO-220-3 Full Pack, Isolated Tab
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM4

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