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TSM5ND50CI

Taiwan Semiconductor Corporation

Product No:

TSM5ND50CI

Package:

TO-220

Batch:

-

Datasheet:

pdf.png

Description:

500V, 5A, SINGLE N-CHANNEL POWE

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 603 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 42W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Package Tube
Base Product Number TSM5

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