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TSM60NB099PW C1G

Taiwan Semiconductor Corporation

Product No:

TSM60NB099PW C1G

Package:

TO-247

Batch:

-

Datasheet:

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Description:

MOSFET N-CHANNEL 600V 38A TO247

Quantity:

Delivery:

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Payment:

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In Stock : 2055

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $13.8795

    $13.8795

  • 10

    $12.22365

    $122.2365

  • 100

    $10.57198

    $1057.198

  • 500

    $9.580883

    $4790.4415

  • 1000

    $8.787975

    $8787.975

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 99mOhm @ 11.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-247
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 329W (Tc)
Series -
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM60

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