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TSM60NB190CZ C0G

Taiwan Semiconductor Corporation

Product No:

TSM60NB190CZ C0G

Manufacturer:

Taiwan Semiconductor Corporation

Package:

TO-220

Batch:

Datasheet:

Description:

MOSFET N-CHANNEL 600V 18A TO220

Quantity:

Delivery:

Payment:

In Stock : 3868

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.5365

$2.5365
10

$2.10805

$21.0805
100

$1.67808

$167.808
500

$1.419927

$709.9635
1000

$1.20478

$1204.78
2000

$1.144541

$2289.082
5000

$1.101516

$5507.58

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1273 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	33.8W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM60