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TSM60NB900CP

Taiwan Semiconductor Corporation

Product No:

TSM60NB900CP

Manufacturer:

Taiwan Semiconductor Corporation

Package:

TO-252, (D-Pak)

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Datasheet:

Description:

600V, 4A, SINGLE N-CHANNEL POWER

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	9.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	900mOhm @ 1.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-252, (D-Pak)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	36.8W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TSM60