Home / FET, MOSFET Arrays / TSM6502CR RLG

TSM6502CR RLG

Taiwan Semiconductor Corporation

Product No:

TSM6502CR RLG

Manufacturer:

Taiwan Semiconductor Corporation

Package:

8-PDFN (5x6)

Batch:

Datasheet:

Description:

MOSFET N/P-CH 60V 24A/18A 8PDFN

Quantity:

Delivery:

Payment:

In Stock : 8153

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.166

$2.166
10

$1.7993

$17.993
100

$1.43241

$143.241
500

$1.212086

$606.043
1000

$1.028432

$1028.432

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of TSM6502CR RLG, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include TSM6502CR RLG and the required quantity in the RFQ. GOOD can get the latest quotations of TSM6502CR RLG without registration. TSM6502CR RLG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1159pF @ 30V, 930pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	10.3nC @ 4.5V, 9.5nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFN (5x6)
Drain to Source Voltage (Vdss)	60V
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	40W
Current - Continuous Drain (Id) @ 25°C	24A (Tc), 18A (Tc)
Mfr	Taiwan Semiconductor Corporation
Package	Tape & Reel (TR)
Base Product Number	TSM6502