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TSM650P02CX

Taiwan Semiconductor Corporation

Product No:

TSM650P02CX

Manufacturer:

Taiwan Semiconductor Corporation

Package:

SOT-23

Batch:

Datasheet:

Description:

-20V, -4.1A, SINGLE P-CHANNEL PO

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	515 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	6.4 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	65mOhm @ 3A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	0.8V @ 250µA
Supplier Device Package	SOT-23
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.56W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TSM650