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TSM80N1R2CI

Taiwan Semiconductor Corporation

Product No:

TSM80N1R2CI

Manufacturer:

Taiwan Semiconductor Corporation

Package:

ITO-220

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Datasheet:

Description:

800V, 5.5A, SINGLE N-CHANNEL POW

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	685 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	19.4 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	ITO-220
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	25W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM80