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TSM80N1R2CL

Taiwan Semiconductor Corporation

Product No:

TSM80N1R2CL

Package:

I2PAK

Batch:

-

Datasheet:

pdf.png

Description:

800V, 5.5A, SINGLE N-CHANNEL POW

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package I2PAK
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 110W (Tc)
Series -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM80

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