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TSM900N06CW

Taiwan Semiconductor Corporation

Product No:

TSM900N06CW

Package:

SOT-223

Batch:

-

Datasheet:

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Description:

60V, 5A, SINGLE N-CHANNEL POWER

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 90mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package SOT-223
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 4.17W (Tc)
Series -
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TSM900

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