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VS-GT200TS065S

Vishay General Semiconductor - Diodes Division

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VS-GT200TS065S

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Vishay General Semiconductor - Diodes Division

Package:

INT-A-PAK IGBT

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Description:

MODULES IGBT - IAP IGBT

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Parameter Info

User Guide

Operating Temperature	-40°C ~ 175°C (TJ)
NTC Thermistor	No
Configuration	Half Bridge Inverter
Current - Collector (Ic) (Max)	476 A
Mounting Type	Chassis Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	650 V
Supplier Device Package	INT-A-PAK IGBT
Series	FRED Pt®
Vce(on) (Max) @ Vge, Ic	1.32V @ 15V, 200A
Input	Standard
Package / Case	Module
Power - Max	1 kW
Mfr	Vishay General Semiconductor - Diodes Division
Current - Collector Cutoff (Max)	200 µA
Package	Box
IGBT Type	Trench

Detail Info

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