onsemi
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| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 1.08Ohm @ 6A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3PB |
| Drain to Source Voltage (Vdss) | 800 V |
| Power Dissipation (Max) | 2.5W (Ta), 190W (Tc) |
| Series | - |
| Package / Case | TO-3P-3, SC-65-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Mfr | onsemi |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tray |
| Base Product Number | 2SK4209 |