Texas Instruments
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 997 pF @ 6 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 5A, 4.5V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 6-WSON (2x2) |
| Drain to Source Voltage (Vdss) | 12 V |
| Power Dissipation (Max) | 2.7W (Ta) |
| Series | NexFET™ |
| Package / Case | 6-WDFN Exposed Pad |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 14.4A (Ta) |
| Mfr | Texas Instruments |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Package | Bulk |
| Base Product Number | CSD13202 |