首页 / 单 FET，MOSFET / IXTP08N100P

IXTP08N100P

IXYS

型号:

IXTP08N100P

品牌:

IXYS

封装:

TO-220-3

批次:

数据手册:

描述:

MOSFET N-CH 1000V 800MA TO220AB

购买数量:

递送:

付款:

库存 : 285

最小起订量: 1 最小递增量: 1

数量

单价

总价

1

$2.66

$2.66
10

$2.38545

$23.8545
100

$1.917195

$191.7195
500

$1.575195

$787.5975
1000

$1.305158

$1305.158
2000

$1.215145

$2430.29
5000

$1.170144

$5850.72

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产品信息

参数信息

用户指南

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11.3 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	20Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 50µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	42W (Tc)
Series	Polar
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	800mA (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTP08