Rohm Semiconductor
型号:
RQ3E120GNTB
封装:
8-HSMT (3.2x3)
批次:
-
描述:
MOSFET N-CH 30V 12A 8HSMT
购买数量:
递送:

付款:
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$0.475
$0.475
10
$0.4104
$4.104
100
$0.30628
$30.628
500
$0.240635
$120.3175
1000
$0.185953
$185.953
请发送询价,我们将立即回复。

| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 12A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 2W (Ta), 16W (Tc) |
| Series | - |
| Package / Case | 8-PowerVDFN |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | RQ3E120 |