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RS1L120GNTB

Rohm Semiconductor

型号:

RS1L120GNTB

封装:

8-HSOP

批次:

-

数据手册:

pdf.png

描述:

MOSFET N-CH 60V 12A/36A 8HSOP

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 6

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.596

    $1.596

  • 10

    $1.3262

    $13.262

  • 100

    $1.05526

    $105.526

  • 500

    $0.892905

    $446.4525

  • 1000

    $0.757625

    $757.625

请发送询价,我们将立即回复。

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12.7mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.7V @ 200µA
Supplier Device Package 8-HSOP
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3W (Ta)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 36A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RS1L

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