Rohm Semiconductor
型号:
SCT3120ALGC11
封装:
TO-247N
批次:
-
描述:
SICFET N-CH 650V 21A TO247N
购买数量:
递送:

付款:
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$8.36
$8.36
10
$7.5506
$75.506
100
$6.250905
$625.0905
500
$5.443234
$2721.617
1000
$4.74089
$4740.89
2000
$4.565301
$9130.602
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| Operating Temperature | 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 6.7A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
| Supplier Device Package | TO-247N |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 103W (Tc) |
| Series | - |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | +22V, -4V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
| Base Product Number | SCT3120 |