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SPP20N60S5XKSA1

Infineon Technologies

型号:

SPP20N60S5XKSA1

封装:

PG-TO220-3-1

批次:

-

数据手册:

pdf.png

描述:

HIGH POWER_LEGACY

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 3589

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $6.0515

    $6.0515

  • 10

    $5.0806

    $50.806

  • 100

    $4.109985

    $410.9985

  • 500

    $3.65332

    $1826.66

  • 1000

    $3.12815

    $3128.15

  • 2000

    $2.945484

    $5890.968

请发送询价,我们将立即回复。

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 190mOhm @ 13A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 5.5V @ 1mA
Supplier Device Package PG-TO220-3-1
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 208W (Tc)
Series CoolMOS™
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SPP20N60

SPP20N60S5XKSA1 标签

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