首页 / 单 FET，MOSFET / TSM085N03PQ33 RGG

TSM085N03PQ33 RGG

Taiwan Semiconductor Corporation

型号:

TSM085N03PQ33 RGG

品牌:

Taiwan Semiconductor Corporation

封装:

8-PDFN (3.1x3.1)

批次:

数据手册:

描述:

MOSFET N-CH 30V 52A 8PDFN

购买数量:

递送:

付款:

库存 : 10001

最小起订量: 1 最小递增量: 1

数量

单价

总价

1

$1.3395

$1.3395
10

$1.0982

$10.982
100

$0.854335

$85.4335
500

$0.724147

$362.0735
1000

$0.589902

$589.902
2000

$0.555322

$1110.644

请发送询价，我们将立即回复。

IICSEMI作为全球著名的电子元器件产品分销商，销售来自世界顶级品牌商的多种电子元件，确保所有产品均经过严格质量控制，符合最高标准。如有兴趣了解 TSM085N03PQ33 RGG 的详细规格、配置、价格、供货周期及付款条款，请随时联系我们。为便于处理您的询价，请将 TSM085N03PQ33 RGG 及其所需数量列入RFQ。 IICSEMI无需注册即可获取 TSM085N03PQ33 RGG 的最新报价。 TSM085N03PQ33 RGG 最新信息：#规格#FAQ#数据手册#标签#相关产品#关联博客

产品信息

参数信息

用户指南

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	817 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	14.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.5mOhm @ 13A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFN (3.1x3.1)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	37W (Tc)
Series	-
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM085