I. True SiC Strength: Parameters Benchmarking International Standards, Performance Delivered in One Step

• 650V High Voltage Resistance: Sufficient voltage margin to easily withstand surges and spikes, making the system safer.
• Ultra-Low Conduction Loss: Typical RDS (on) of 160mΩ under 15V drive, with more stable high-temperature characteristics and significantly reduced heat generation.
• High Current Capacity: Continuous current of 20A at 25℃, peak current of 30A, easily handling high-power scenarios.
• Ultra-Fast Switching: Low gate charge and low junction capacitance, resulting in small switching losses, supporting higher frequencies, and reducing the volume of transformers/inductors.
• Strong EMI Resistance: Optimized structural design effectively reduces interference, simplifies filtering, and improves overall machine compatibility.
• Wide Temperature Reliability: Operating junction temperature of -55℃~+175℃, no derating at high temperatures, and stable operation in harsh environments.
• Easy to Drive and Parallel: Simple driving, excellent paralleling performance, stable current sharing of multiple tubes, and easier capacity expansion.
• Environmental Compliance: RoHS compliant, green production, adapting to global market access requirements.

II. TO-263 Package: SMD Mass Production, Dual Advantages of Heat Dissipation and Density

• Supports SMT automated placement, enabling efficient production and strong consistency.
• Large bottom pad for excellent heat dissipation, lower thermal resistance, and more stable long-term operation.
• Compact size, helping equipment achieve higher power density and one-step thin and light design.
• Pin-compatible with mainstream models of the same specification, allowing direct replacement without board modification for rapid efficiency upgrading.

III. Core Value: Using SiC to Solve Real Pain Points

1. Significant Efficiency Improvement: Dual low conduction and switching losses, taking the overall machine efficiency to a new level, achieving energy saving, temperature reduction, and extended service life in one step.
2. Power Density Breakthrough: Supports higher operating frequencies, making passive components smaller, and equipment lighter, thinner, and more space-saving.
3. Greatly Reduced Heat Dissipation Costs: Low thermal resistance + low loss design, simplifying heat sinks or even enabling fanless solutions, reducing BOM and structural costs.
4. Long-Term Stability and Reliability: Silicon carbide inherently has high voltage resistance, high temperature resistance, and radiation resistance, with longer service life and lower failure rate, making it more reliable for industrial and automotive scenarios.

IV. Full-Scenario Application: Covering Mainstream Medium and High-Voltage Power Scenarios

• Switching Power Supplies / Server Power Supplies / Communication Power Supplies: High-efficiency PFC+DC-DC solutions, approaching titanium-level energy efficiency.
• PV Inverters / Energy Storage Converters / Micro-Inverters: Improve power generation, reduce volume, suitable for household and industrial/commercial use.
• Industrial Control / Frequency Converters / UPS / Welding Machines: Stable output under high temperature and high load.
• Fast Charging Power Supplies / LED Drivers / Home Appliance Motherboards: Small size, low heat generation, and high consistency.
• Automotive OBC/DC-DC/Charging Modules: 650V voltage resistance matches high-voltage platforms, efficient and reliable.

V. Toner TiONER: Domestic SiC, a Trustworthy Choice

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