2SK1119(F)
Toshiba Semiconductor and Storage
Product No:
2SK1119(F)
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
Description:
MOSFET N-CH 1000V 4A TO220AB
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 3.8Ohm @ 2A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 1000 V |
| Power Dissipation (Max) | 100W (Tc) |
| Series | - |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Mfr | Toshiba Semiconductor and Storage |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | 2SK1119 |
Detail Info
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